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ETH Zürich - D-PHYS - Solid State Physics - Microstructure Research - Instrumentation - FESEMPA / S-FESEM

FESEMPA / S-FESEM

Selected Article

Nat. Comm 7, 13611 (2016)
Critical exponents and scaling invariance in the absence of a critical point
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Proc. R. Soc. A 472, 2195 (2016)
Thirty per cent contrast in secondary-electron imaging by scanning field-emission microscopy
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Phys. Rev. B 89, 014429 (2014)
Domain-wall free energy in Heisenberg ferromagnets
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Phys. Rev. B 87, 115436 (2013)
Scale invariance of a diodelike tunnel junction
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[Near] Field emission scanning electron microscopy with polarization analysis of the secondary electrons ([N]FESEMPA) / Spin-polarized [near] field emission scanning electron microscopy ([N]S-FESEM)
We intend to study alternative tip materials for spin polarized field emission as well as develop and optimize the magnetization of the field-emitter. These emitters will be implemented in the [N]FESEM to perform electron microscopy with a polarized incident beam, i.e. S-[N]FESEM. In addition, we have constructed a sensitive Mott detector to measure the polarization of the secondary electrons (SE)s. This detector will be used in combination with the [N]FESEM to analyze SEs, which were excited from an unpolarized electron beam; hence [N]FESEMPA. We assert that additional analysis of the secondary electrons will also exhibit a comparable resolution to the surface topography. This microscope enables the user to image conducting surfaces with near atomic resolution; however the image contrast mechanism is not limited to only topography, surface magnetization, and the chemical properties of the sample. Low primary beam energies also allow for additional contrast mechanisms, which have never been observed before.
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